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IXFR26N100PN-Channel 1000 V 15A (Tc) 290W (Tc) Through Hole ISOPLUS247™

1:$23.5320

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFR26-953680
ManufacturerLittelfuse®
MPN #.IXFR26N100P
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFR26N100P(PDF)
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In Stock: 140
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 23.5320
Ext. Price$ 23.5320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$23.5320$7059.6750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFR26
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)197 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11900 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation290W (Tc)
RDS(on) Drain-to-Source On Resistance430mOhm @ 13A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFR26N100P
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR26N100P is a power MOSFET manufactured by Littelfuse®, featuring an N-Channel configuration. It is designed to handle a maximum voltage of 1000 V and a current of 15A at case temperature (Tc). The part can dissipate up to 290W of power at Tc and is encapsulated in a robust ISOPLUS247™ through-hole package, enhancing its thermal performance. It has a gate-to-source voltage rating of ±30V and a gate charge of 197 nC at 10 V, which makes it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.