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IXFP60N25X3N-Channel 250 V 60A (Tc) 320W (Tc) Through Hole TO-220AB (IXFP)

1:$6.8210

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFP60-956016
ManufacturerLittelfuse®
MPN #.IXFP60N25X3
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFx60N25X3(PDF)
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In Stock: 31
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.8210
Ext. Price$ 6.8210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.8210$6.8210
50$5.4470$272.3720
100$4.8740$487.3690
500$4.3000$2149.9690
1000$3.8710$3870.6880
2000$3.6260$7252.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X3
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFP60
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3610 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation320W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 30A, 10V
Package Type (Mfr.)TO-220AB (IXFP)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.5mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx60N25X3
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFP60N25X3 by Littelfuse® is an N-Channel MOSFET designed for efficient power handling, characterized by its capacity to manage 60A at a drain-source voltage of 250V and dissipate 320W of power in optimal thermal conditions. It features a low on-state resistance of 23 milliohms at a current of 30A and a gate-source voltage of 10V, contributing to its low power loss during operation. The device exhibits a total gate charge of 50 nanocoulombs at 10V and a typical input capacitance of 3610 picofarads at 25V. Encapsulated in a TO-220AB package, it is suitable for through-hole mounting, facilitating its integration into various electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.