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IXFN82N60Q3N-Channel 600 V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B

1:$49.4960

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN82-949653
ManufacturerLittelfuse®
MPN #.IXFN82N60Q3
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFN82N60Q3(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 49.4960
Ext. Price$ 49.4960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$49.4960$49.4960
10$44.9930$449.9260
100$40.4930$4049.2940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Q3 Class
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN82
Continuous Drain Current (ID) @ 25°C66A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)275 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation960W (Tc)
RDS(on) Drain-to-Source On Resistance75mOhm @ 41A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN82N60Q3
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN82N60Q3 is a high-power N-Channel MOSFET manufactured by Littelfuse®. It is capable of handling a maximum voltage of 600 V and a current of 66A, making it suitable for demanding applications. The device is designed to dissipate up to 960W of power when mounted on a chassis, and it features a low on-resistance of 75mOhm at 41A with a gate voltage of 10V, ensuring efficient conduction. The MOSFET also has a total gate charge of 275 nC at 10V, highlighting its effectiveness in switching applications. It is encapsulated in a SOT-227B package, providing robust mechanical protection and facilitating heat dissipation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.