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IXFN56N90PN-Channel 900 V 56A (Tc) 1000W (Tc) Chassis Mount SOT-227B

1:$50.3760

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN56-1048599
ManufacturerLittelfuse®
MPN #.IXFN56N90P
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFN56N90P(PDF)
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In Stock: 84
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 50.3760
Ext. Price$ 50.3760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$50.3760$50.3760
10$45.7960$457.9590
100$41.2170$4121.6500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN56
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)375 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)23000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1000W (Tc)
RDS(on) Drain-to-Source On Resistance135mOhm @ 28A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 3mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN56N90P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN56N90P is an N-Channel MOSFET manufactured by Littelfuse®, designed for high-voltage and high-current applications. It features a voltage rating of 900 V and a continuous current rating of 56A, with a power dissipation capacity of 1000W when adequately mounted on a chassis. The device is housed in a SOT-227B package, which is suitable for efficient thermal management. It operates with a gate-source voltage threshold of ±30V and has a gate charge of 375 nC at 10 V, indicative of its switching performance capabilities. The MOSFET is activated with a gate voltage of 6.5V at 3mA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.