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IXFN420N10TN-Channel 100 V 420A (Tc) 1070W (Tc) Chassis Mount SOT-227B

1:$27.5860

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN42-957328
ManufacturerLittelfuse®
MPN #.IXFN420N10T
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFN420N10T(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 27.5860
Ext. Price$ 27.5860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$27.5860$27.5860
10$24.5160$245.1610
100$21.4420$2144.2310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Trench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN420
Continuous Drain Current (ID) @ 25°C420A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)670 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)47000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1070W (Tc)
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 60A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN420N10T
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN420N10T is a robust N-Channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It features a voltage rating of 100 V and a substantial current carrying capability of 420A at case temperature (Tc), delivering a maximum power of 1070W (Tc). Housed in a SOT-227B package for chassis mounting, this MOSFET is engineered for efficient thermal management. Its gate charge is specified at 670 nC when operating with a gate-to-source voltage of 10 V, and it can handle a gate-to-source voltage range of ±20V, providing flexibility in various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.