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IXFN230N20TN-Channel 200 V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B

1:$31.2960

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN23-948909
ManufacturerLittelfuse®
MPN #.IXFN230N20T
Estimated Lead Time27 Weeks
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 31.2960
Ext. Price$ 31.2960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$31.2960$31.2960
10$27.8850$278.8530
100$24.4760$2447.5750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Trench
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN230
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)378 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)28000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1090W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 60A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN230N20T, manufactured by Littelfuse®, is an N-Channel MOSFET designed for high-power applications. It features a voltage rating of 200 volts and can handle a continuous current of 220A when mounted on a chassis. The device can dissipate up to 1090 watts of power under optimal conditions. Encased in a SOT-227B package, it offers a low on-state resistance of 7.5 milliohms at a test current of 60A and a gate-source voltage of 10 volts. Additionally, the part can tolerate gate voltages up to ±20 volts, making it suitable for robust switching tasks.
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