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IXFN180N15PN-Channel 150 V 150A (Tc) 680W (Tc) Chassis Mount SOT-227B

1:$24.0380

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN18-1038496
ManufacturerLittelfuse®
MPN #.IXFN180N15P
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFN180N15P(PDF)
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In Stock: 1200
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 24.0380
Ext. Price$ 24.0380
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$24.0380$24.0380
10$21.3640$213.6370
100$18.6850$1868.5130
500$15.9440$7971.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN180
Continuous Drain Current (ID) @ 25°C150A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation680W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 90A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN180N15P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN180N15P from Littelfuse® is a robust N-Channel power MOSFET designed for high-power applications. It boasts a voltage rating of 150V and a current capacity of 150A at the case temperature (Tc), making it suitable for demanding electrical environments. The device is capable of handling up to 680W of power, mounted on a chassis with a SOT-227B package. It offers low on-resistance, measured at 11mOhm at 90A and 10V, ensuring efficient performance. Additionally, the MOSFET operates with a gate-source voltage of 10V and exhibits a gate charge of 5V at a 4mA current, highlighting its capability to effectively manage power in high-stress conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.