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IXFN110N60P3N-Channel 600 V 90A (Tc) 1500W (Tc) Chassis Mount SOT-227B

1:$35.7840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFN11-999842
ManufacturerLittelfuse®
MPN #.IXFN110N60P3
Estimated Lead Time44 Weeks
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DatasheetDatasheetIXFN110N60P3(PDF)
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In Stock: 447
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 35.7840
Ext. Price$ 35.7840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$35.7840$35.7840
10$31.8880$318.8780
100$27.9890$2798.9440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFN110
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)245 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)18000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1500W (Tc)
RDS(on) Drain-to-Source On Resistance56mOhm @ 55A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN110N60P3
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN110N60P3 is a robust N-Channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It is capable of handling 600 V and 90A at its designated case temperature, with a substantial power dissipation capacity of 1500W. Encased in a SOT-227B chassis mount package, this device features a capacitance of 18000 pF at 25 V and requires a gate-source voltage of 10V for operation. Its design aligns with efficient power management in demanding environments, making it apt for use in heavy-duty electrical circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.