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IXFK80N65X2N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-264AA

1:$13.3610

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK80-1040563
ManufacturerLittelfuse®
MPN #.IXFK80N65X2
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetBuilding, Home Automation Appl Guide(PDF)
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In Stock: 343
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 13.3610
Ext. Price$ 13.3610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$13.3610$13.3610
25$12.1870$304.6720
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK80
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)143 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8245 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 40A, 10V
Package Type (Mfr.)TO-264AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 4mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Building, Home Automation Appl GuideIXFx80N65X2 Datasheet
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK80N65X2 is a semiconductor device manufactured by Littelfuse®, featuring an N-Channel configuration. It is capable of handling a voltage of up to 650 volts and a continuous current of 80 amperes at a case temperature (Tc). The device is designed for high power dissipation, with a power rating of 890 watts at Tc. Encased in a TO-264AA through-hole package, it offers a capacitance of 8245 pF at 25 volts and has a gate threshold voltage range of ±30 volts with a typical gate-source voltage of 10 volts. This component is suitable for high-power applications requiring robust performance under demanding conditions.
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