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IXFK66N85XN-Channel 850 V 66A (Tc) 1250W (Tc) Through Hole TO-264AA

1:$19.1910

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK66-1019879
ManufacturerLittelfuse®
MPN #.IXFK66N85X
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFK66N85X, IXFX66N85X(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 19.1910
Ext. Price$ 19.1910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
25$19.1910$479.7720
125$17.9910$2248.9140
250$16.7910$4197.6720
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK66
Continuous Drain Current (ID) @ 25°C66A (Tc)
Drain-to-Source Voltage (VDS)850 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8900 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1250W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFK66N85X, IXFX66N85X
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part IXFK66N85X is a high-voltage N-channel MOSFET manufactured by Littelfuse®, designed to handle significant power levels. It features an 850V drain-source voltage and a continuous drain current of 66A when the case temperature (Tc) is maintained. This power semiconductor device can dissipate 1250W under optimal thermal management conditions. Encased in a TO-264AA package for through-hole mounting, it provides robustness for various circuits. The MOSFET has a gate-source threshold voltage of 10V and can withstand gate-source voltages up to ±30V. Additionally, it offers a gate charge capacitance of 8900 pF at 25V, making it suitable for high-frequency switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.