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IXFK32N80PN-Channel 800 V 32A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)

1:$11.2760

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK32-1011761
ManufacturerLittelfuse®
MPN #.IXFK32N80P
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXF(K,X)32N80P(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 11.2760
Ext. Price$ 11.2760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
25$11.2760$281.9080
125$10.6130$1326.6640
250$10.2820$2570.4530
625$9.6190$6011.7580
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK32
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 16A, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(K,X)32N80P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK32N80P is an N-Channel MOSFET manufactured by Littelfuse, designed for high-power applications. It is capable of handling a maximum voltage of 800V and a continuous current of 32A at the case temperature (Tc), with a power dissipation capacity of 830W. The device exhibits an on-resistance of 270 milliohms at 16A with a gate-source voltage of 10V. Packaged in a TO-264AA through-hole form factor, it offers robust performance for environments requiring significant power handling. Additionally, it features a gate-source voltage tolerance of up to ±30V, making it versatile for various high-voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.