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IXFK32N100XN-Channel 1000 V 32A (Tc) 890W (Tc) Through Hole TO-264

1:$13.1980

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK32-1007822
ManufacturerLittelfuse®
MPN #.IXFK32N100X
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFx32N100X(HV) Datasheet(PDF)
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In Stock: 210
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 13.1980
Ext. Price$ 13.1980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$13.1980$13.1980
25$12.0380$300.9530
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK32
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4075 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 16A, 10V
Package Type (Mfr.)TO-264
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6V @ 4mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx32N100X(HV) Datasheet
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK32N100X is a robust N-Channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It operates at a maximum voltage of 1000 V and can handle a continuous current of 32A when properly cooled to its maximum junction temperature. Encased in a TO-264 through-hole package, it boasts a high power dissipation capability of 890W, ensuring efficient heat management for demanding tasks. Its key electrical characteristics include a total gate charge of 130 nC at 10 V, a gate threshold voltage of 6V at 4mA, and a drain-source on-resistance of 220 mOhm at 16A with 10V driving voltage, making it suitable for applications requiring efficient and reliable power handling.
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