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IXFK220N15PN-Channel 150 V 220A (Tc) 1250W (Tc) Through Hole TO-264AA (IXFK)
1:$19.9260
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ABRmicro #.ABR2045-IXFK22-961285
ManufacturerLittelfuse®
MPN #.IXFK220N15P
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetIXF(K,X)220N15P(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 19.9260
Ext. Price$ 19.9260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$19.9260$19.9260
25$16.5160$412.8880
100$15.4840$1548.3810
500$13.2120$6606.0940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK220
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)162 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15400 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1250W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK220N15P is a semiconductor component manufactured by Littelfuse®, featuring an N-channel configuration. This power MOSFET is designed to handle a maximum voltage of 150V and a continuous current of 220A when held at the case temperature (Tc). It has a power dissipation capacity of 1250W at Tc. It is encapsulated in a TO-264AA through-hole package. The device includes a total gate charge of 162 nC at 10V and can withstand a gate-to-source voltage variation up to ±20V. Additionally, it possesses a typical input capacitance of 15400 pF at a 25V rating.
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