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IXFK200N10PN-Channel 100 V 200A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)

1:$12.0450

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK20-961234
ManufacturerLittelfuse®
MPN #.IXFK200N10P
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXF(K,X)200N10P(PDF)
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In Stock: 140
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 12.0450
Ext. Price$ 12.0450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
25$12.0450$301.1130
125$11.3360$1416.9770
250$10.9810$2745.2340
625$10.2730$6420.8200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK200
Continuous Drain Current (ID) @ 25°C200A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)235 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 100A, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(K,X)200N10P
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK200N10P manufactured by Littelfuse® is an N-Channel MOSFET that features a breakdown voltage of 100 V and a maximum continuous drain current of 200A when measured at the case temperature (Tc). It offers a substantial power dissipation of 830W under the same conditions. Housed in a TO-264AA through-hole package, this component exhibits a low on-state resistance of 7.5 milliohms at a gate-source voltage of 10V and a drain current of 100A, enabling efficient current conduction. The gate-source voltage can tolerate up to ±20V, and it presents an input capacitance of 7600 pF at 25 V, indicative of its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.