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IXFK170N25X3N-Channel 250 V 170A (Tc) 960W (Tc) Through Hole TO-264AA

1:$11.5830

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK17-983237
ManufacturerLittelfuse®
MPN #.IXFK170N25X3
Estimated Lead Time32 Weeks
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DatasheetDatasheetIXFx170N25X3(HV)(PDF)
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In Stock: 2
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 11.5830
Ext. Price$ 11.5830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$11.5830$11.5830
25$9.7090$242.7280
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X3
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK170
Continuous Drain Current (ID) @ 25°C170A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13500 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation960W (Tc)
RDS(on) Drain-to-Source On Resistance7.4mOhm @ 85A, 10V
Package Type (Mfr.)TO-264AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx170N25X3(HV)
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK170N25X3 by Littelfuse® is a robust N-Channel MOSFET designed for through-hole mounting in a TO-264AA package. It supports a maximum continuous current of 170A and can handle up to 250V, ensuring high power tolerance with a power dissipation of 960W under specific conditions. This metal-oxide-semiconductor field-effect transistor operates with a gate threshold voltage of 4.5V at 4mA and a gate-source voltage rating of 10V, making it suitable for various high-power applications. Its efficient thermal management and electrical characteristics make it a reliable choice for power conversion and amplification tasks.
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