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IXFH80N25X3N-Channel 250 V 80A (Tc) 390W (Tc) Through Hole TO-247 (IXTH)

1:$9.7880

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH80-1039125
ManufacturerLittelfuse®
MPN #.IXFH80N25X3
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFx80N25X3 Datasheet(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 9.7880
Ext. Price$ 9.7880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.7880$9.7880
30$7.8160$234.4730
120$6.9930$839.2050
510$6.1700$3146.6680
1020$5.5530$5663.6780
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X3
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH80
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)83 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5430 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation390W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 40A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx80N25X3 Datasheet
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH80N25X3 is an N-Channel MOSFET manufactured by Littelfuse®, designed to handle up to 250 volts and a continuous current of 80 amps under specified conditions. It can dissipate 390 watts of power when properly mounted and cooled via a through-hole TO-247 package, identified as IXTH, that provides robust thermal performance. Notable electrical parameters include a gate threshold voltage of 4.5 volts at a gate current of 1.5 milliamps, a capacitive load of 5430 picofarads at 25 volts, and a total gate charge of 83 nanocoulombs at 10 volts, making it suitable for high power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.