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IXFH6N120N-Channel 1200 V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

1:$9.8570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH6N-968553
ManufacturerLittelfuse®
MPN #.IXFH6N120
Estimated Lead Time57 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFH6N120(PDF)
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In Stock: 413
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 9.8570
Ext. Price$ 9.8570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.8570$9.8570
30$7.9760$239.2860
120$7.5080$900.9150
510$6.8030$3469.6260
1020$6.2400$6364.8640
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH6
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1950 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance2.6Ohm @ 3A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 2.5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFH6N120
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH6N120 is a MOSFET manufactured by Littelfuse®, designed for high-voltage applications with an N-Channel configuration. It supports a voltage rating of 1200V and a current capacity of 6A at a specified case temperature (Tc). The device is capable of handling up to 300W thermal dissipation at Tc and comes in a TO-247AD through-hole package, designated as IXFH. With an input capacitance of 1950 pF at 25V and an on-resistance of 2.6 Ohm at a drain current of 3A with a gate-to-source voltage of 10V, this component is tailored for efficient high-power switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.