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IXFH52N50P2N-Channel 500 V 52A (Tc) 960W (Tc) Through Hole TO-247AD (IXFH)

1:$8.0110

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH52-1035937
ManufacturerLittelfuse®
MPN #.IXFH52N50P2
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFH/FT52N50P2(PDF)
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In Stock: 123
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 8.0110
Ext. Price$ 8.0110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$8.0110$240.3380
90$7.1680$645.0860
300$6.7470$2024.0630
750$6.3250$4743.7970
1500$5.6930$8539.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, PolarP2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH52
Continuous Drain Current (ID) @ 25°C52A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)113 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6800 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation960W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 26A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFH/FT52N50P2
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH52N50P2 is a robust N-Channel MOSFET manufactured by Littelfuse®, designed for high-power applications. It operates with a drain-source breakdown voltage of 500 V and delivers a continuous current of 52A at the case temperature. The device can handle a maximum power dissipation of 960W. Packaged in a TO-247AD through-hole configuration, it offers a gate-source voltage rating of ±30V and a substantial input capacitance of 6800 pF at 25V. These specifications make it suitable for demanding power switching applications, ensuring efficient performance under high-voltage and current conditions.
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