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IXFH400N075T2N-Channel 75 V 400A (Tc) 1000W (Tc) Through Hole TO-247AD (IXFH)

1:$13.2250

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH40-999974
ManufacturerLittelfuse®
MPN #.IXFH400N075T2
Estimated Lead Time26 Weeks
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 13.2250
Ext. Price$ 13.2250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$13.2250$13.2250
30$10.7080$321.2360
120$10.0790$1209.4650
510$9.1330$4657.9580
1020$8.3780$8545.3690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, TrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH400
Continuous Drain Current (ID) @ 25°C400A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)420 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)24000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1000W (Tc)
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 100A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH400N075T2 is a high-power N-channel MOSFET manufactured by Littelfuse®, designed for efficient switching and amplification tasks. It is capable of handling a maximum voltage of 75V and a current of up to 400A, making it suitable for demanding electrical environments. The MOSFET features a power dissipation rating of 1000W under specific conditions, ensuring reliable performance under high stress. With a gate threshold voltage of ±20V and a typical on-resistance of 2.3mOhm when conducting 100A at 10V, it is optimized for low loss and enhanced efficiency. The part is housed in a TO-247AD package, enabling secure and effective through-hole mounting in various electrical circuits.
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