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IXFH28N60P3N-Channel 600 V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

1:$6.1810

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH28-945416
ManufacturerLittelfuse®
MPN #.IXFH28N60P3
Estimated Lead Time44 Weeks
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In Stock: 100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.1810
Ext. Price$ 6.1810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.1810$6.1810
30$4.9340$148.0280
120$4.4140$529.6350
510$3.8950$1986.5140
1020$3.5060$3576.3750
2010$3.2840$6601.2170
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH28
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3560 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation695W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 14A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 2.5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH28N60P3 is a power MOSFET manufactured by Littelfuse® designed for high voltage and current applications. It is an N-Channel MOSFET with a voltage rating of 600V and a continuous current rating of 28A when mounted with a case temperature (Tc) of 695W. Encased in a TO-247AD package, this component features a gate charge of 50 nC at 10V and a gate threshold voltage of 5V with a gate leakage current of 2.5mA. It also offers a maximum gate-to-source voltage rating of ±30V, making it suitable for robust and demanding power switching environments.
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