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IXFH20N80PN-Channel 800 V 20A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

1:$8.6850

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ABRmicro #.ABR2045-IXFH20-942622
ManufacturerLittelfuse®
MPN #.IXFH20N80P
Estimated Lead Time46 Weeks
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.6850
Ext. Price$ 8.6850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.6850$8.6850
30$6.9360$208.0800
120$6.2060$744.7280
510$5.4760$2792.8240
1020$4.9280$5026.4330
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4685 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance520mOhm @ 10A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH20N80P is an N-Channel MOSFET manufactured by Littelfuse®. It is designed for high-voltage, high-power applications, offering a drain-to-source voltage rating of 800V and a continuous drain current of 20A at a case temperature (Tc) of 25°C. Packaged in a TO-247AD through-hole configuration, this component can dissipate up to 500W of power under the specified conditions. It has a typical on-state resistance of 520 milliohms at 10A and 10V, and features a gate-source voltage of 10V, with a gate threshold voltage of 5V at a gate current of 4mA.
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