IXFH160N15T2N-Channel 150 V 160A (Tc) 880W (Tc) Through Hole TO-247AD (IXFH)
1:$5.9110
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH16-1015689
ManufacturerLittelfuse®
MPN #.IXFH160N15T2
Estimated Lead Time27 Weeks
SampleGet Free Sample
Datasheet
IXFH160N15T2(PDF)
IXFH160N15T2(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.9110
Ext. Price$ 5.9110
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$5.9110$177.3210
90$5.2890$476.0210
300$4.9780$1493.3440
750$4.6670$3499.8750
1500$4.1990$6298.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, TrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH160
Continuous Drain Current (ID) @ 25°C160A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)253 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15000 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation880W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 80A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH160N15T2 is a high-power N-channel MOSFET manufactured by Littelfuse®. This component is designed for robust performance with a maximum voltage rating of 150V and a continuous current rating of 160A at a case temperature (Tc). It supports a substantial power dissipation of up to 880W, also at Tc, and comes in a TO-247AD through-hole package, designated as IXFH. The MOSFET requires a gate threshold voltage of 4.5V at 1mA and exhibits a total gate charge of 253 nC at 10V, indicating its efficiency in switching operations. These specifications make it suitable for high-demand electrical circuits that require reliable and efficient power handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.