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IXFH12N90PN-Channel 900 V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)

1:$5.8720

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ABRmicro #.ABR2045-IXFH12-978933
ManufacturerLittelfuse®
MPN #.IXFH12N90P
Estimated Lead Time46 Weeks
SampleGet Free Sample
DatasheetDatasheetIXF(H,V)12N90P/PS(PDF)
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In Stock: 806
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.8720
Ext. Price$ 5.8720
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.8720$5.8720
30$4.6880$140.6330
120$4.3440$521.2200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFH12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3080 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation380W (Tc)
RDS(on) Drain-to-Source On Resistance900mOhm @ 6A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(H,V)12N90P/PS
Environmental Information
Ixys IC REACH
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH12N90P is an N-Channel MOSFET manufactured by Littelfuse®, designed for high-voltage, high-power applications. It features a maximum drain-source voltage of 900V and a continuous drain current of 12A, with a power dissipation capability of up to 380W (when mounted on a suitable heatsink). The device is housed in a TO-247AD through-hole package, allowing for efficient thermal management. Its input capacitance is 3080 pF at 25V, and it has a gate charge of 56 nC at 10V, making it suitable for operations requiring fast switching speeds and efficient handling of power loads.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.