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IXFA90N20X3N-Channel 200 V 90A (Tc) 390W (Tc) Surface Mount TO-263AA (IXFA)
1:$8.4110
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFA90-951266
ManufacturerLittelfuse®
MPN #.IXFA90N20X3
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetIXFA90N20X3(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.4110
Ext. Price$ 8.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.4110$8.4110
50$6.7170$335.8560
100$6.0100$600.9500
500$5.3030$2651.4690
1000$4.7730$4772.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesHiPerFET™, Ultra X3
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFA90
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)78 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5420 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation390W (Tc)
RDS(on) Drain-to-Source On Resistance12.8mOhm @ 45A, 10V
Package Type (Mfr.)TO-263AA (IXFA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.5mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFA90N20X3 is a semiconductor component manufactured by Littelfuse®, designed as an N-Channel MOSFET with a voltage rating of 200 V and a continuous current rating of 90A at a specified case temperature. It features a power dissipation capability of up to 390W under optimal conditions. The component is housed in a Surface Mount TO-263AA package, making it suitable for high-density circuit designs. It exhibits a low on-state resistance of 12.8 milliohms at 45A and 10V, ensuring efficient operation. Additionally, the MOSFET has an input capacitance of 5420 pF at 25 V and requires a total gate charge of 78 nC at 10 V, facilitating rapid switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.