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IXFA3N120N-Channel 1200 V 3A (Tc) 200W (Tc) Surface Mount TO-263AA (IXFA)

1:$8.1730

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFA3N-955910
ManufacturerLittelfuse®
MPN #.IXFA3N120
Estimated Lead Time57 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFA3N120, IXFP3N120(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.1730
Ext. Price$ 8.1730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.1730$8.1730
50$6.5220$326.0810
100$5.8340$583.4190
500$5.1490$2574.4380
1000$4.6340$4633.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFA3
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1050 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance4.5Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-263AA (IXFA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1.5mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFA3N120, IXFP3N120
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFA3N120 is a surface-mount MOSFET manufactured by Littelfuse®. It is an N-Channel transistor designed to handle voltages up to 1200 V and a current of 3A in its thermal capacity (Tc). The device is capable of dissipating 200W of power under optimal thermal conditions and comes in a TO-263AA package. It features a total gate charge of 39 nC at 10 V, which is indicative of its switching characteristics. This component is suitable for applications that require high voltage handling and efficient power management in a compact format.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.