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IXFA22N60P3N-Channel 600 V 22A (Tc) 500W (Tc) Surface Mount TO-263AA (IXFA)

1:$3.3210

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ABRmicro #.ABR2045-IXFA22-961969
ManufacturerLittelfuse®
MPN #.IXFA22N60P3
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXF(A,P,Q,H)22N60P3(PDF)
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In Stock: 82
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.3210
Ext. Price$ 3.3210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$3.3210$996.4130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFA22
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 11A, 10V
Package Type (Mfr.)TO-263AA (IXFA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1.5mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(A,P,Q,H)22N60P3
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFA22N60P3 is a surface mount N-Channel MOSFET manufactured by Littelfuse®, featuring a voltage rating of 600V and a continuous current capacity of 22A at the case temperature (Tc). It offers a maximum power dissipation of 500W at Tc, making it suitable for high-power applications. Packaged in a TO-263AA (IXFA) form factor, this component has a gate-to-source voltage tolerance of ±30V. The device operates efficiently at a gate threshold voltage of 10V, providing reliable performance in various electronic circuits.
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