IXFA130N10T2N-Channel 100 V 130A (Tc) 360W (Tc) Surface Mount TO-263AA (IXFA)
1:$4.6000
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ABRmicro #.ABR2045-IXFA13-938025
ManufacturerLittelfuse®
MPN #.IXFA130N10T2
Estimated Lead Time27 Weeks
SampleGet Free Sample
Datasheet
IXFx130N10T2(PDF)
IXFx130N10T2(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.6000
Ext. Price$ 4.6000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.6000$4.6000
50$3.6440$182.2190
100$3.1240$312.3750
500$2.7770$1388.6880
1000$2.3770$2376.8130
2000$2.2390$4477.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, TrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFA130
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance9.1mOhm @ 65A, 10V
Package Type (Mfr.)TO-263AA (IXFA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFA130N10T2 is a surface-mount N-Channel MOSFET manufactured by Littelfuse, featuring a voltage rating of 100 volts and a current capacity of 130 amperes when measured at the case temperature (Tc). With a power dissipation capability of up to 360 watts at the case temperature, it is housed in a TO-263AA package. The device operates with a gate voltage tolerance of ±20 volts and typically requires a drive voltage of 10 volts. Additionally, it has a gate charge of 130 nanocoulombs when driven at 10 volts, making it suitable for efficient switching applications.
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