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IXFA12N65X2N-Channel 650 V 12A (Tc) 180W (Tc) Surface Mount TO-263AA (IXFA)

1:$3.3960

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFA12-917952
ManufacturerLittelfuse®
MPN #.IXFA12N65X2
Estimated Lead Time32 Weeks
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In Stock: 166
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 3.3960
Ext. Price$ 3.3960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.3960$3.3960
50$2.6930$134.6500
100$2.3080$230.8000
500$2.0520$1026.0000
1000$1.7570$1757.0000
2000$1.6550$3310.0000
5000$1.5870$7935.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Ultra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFA12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1134 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance310mOhm @ 6A, 10V
Package Type (Mfr.)TO-263AA (IXFA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)