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IV1Q12160T4N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4

1:$15.6880

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IV1Q12-2784486
ManufacturerInventchip
MPN #.IV1Q12160T4
Estimated Lead Time12 Weeks
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DatasheetDatasheetIV1Q12160T4(PDF)
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In Stock: 67
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 15.6880
Ext. Price$ 15.6880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$15.6880$15.6880
30$9.8080$294.2400
120$8.7730$1052.7600
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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IV1Q12050T4$29.8010
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N-Channel 1200 V 58A (Tc) 344W (Tc) Through Hole TO-247-4
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation138W (Tc)
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+20V, -5V
Gate Charge Total (Qg)(Max.)43 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)885 pF @ 800 V
RDS(on) Drain-to-Source On Resistance195mOhm @ 10A, 20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.9V @ 1.9mA
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
IV1Q12160T4
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)