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IV1Q12050T3N-Channel 1200 V 58A (Tc) 327W (Tc) Through Hole TO-247-3

1:$28.7650

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IV1Q12-2842015
ManufacturerInventchip
MPN #.IV1Q12050T3
Estimated Lead Time12 Weeks
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DatasheetDatasheetIV1Q12050T3(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 28.7650
Ext. Price$ 28.7650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$28.7650$28.7650
10$25.5620$255.6200
100$22.3580$2235.8000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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IV1Q12050T4$29.8010
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IV1Q12160T4$15.6880
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N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 20 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation327W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 20A, 20V
Package Type (Mfr.)TO-247-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+20V, -5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.2V @ 6mA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2770 pF @ 800 V
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
IV1Q12050T3
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)