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RFP50N06N-Channel 60 V 50A (Tc) 131W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-RFP50N-1219899
ManufacturerHarris Corporation
MPN #.RFP50N06
Estimated Lead Time-
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DatasheetDatasheetRFP50N06(PDF)
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In Stock: 2179
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2020 pF @ 25 V
MfrHarris Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation131W (Tc)
RDS(on) Drain-to-Source On Resistance22mOhm @ 50A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
RFP50N06
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)