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RFD16N05N-Channel 50 V 16A (Tc) 72W (Tc) Through Hole IPAK

1:$0.7590

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ABRmicro #.ABR278-RFD16N-904081
ManufacturerHarris Corporation
MPN #.RFD16N05
Estimated Lead Time-
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DatasheetDatasheetDatasheet (PDF)
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In Stock: 9759
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.7590
Ext. Price$0.7590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$0.7590$227.5880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrHarris Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance47mOhm @ 16A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Datasheet
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The RFD16N05, manufactured by Harris Corporation, is an N-Channel MOSFET designed to handle a maximum continuous drain current of 16A and a drain-source voltage of 50 V. It features a power dissipation capacity of 72W when mounted on a proper heat sink, as specified by its case temperature rating. This component comes in an IPAK package, which is a through-hole design. Key electrical characteristics include a gate-to-source threshold voltage of 4V at a drain current of 250µA and an input capacitance of 900 pF at a drain-source voltage of 25 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.