ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
RFD16N05N-Channel 50 V 16A (Tc) 72W (Tc) Through Hole IPAK

1:$0.7140

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-RFD16N-904081
ManufacturerHarris Corporation
MPN #.RFD16N05
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetDatasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 9759
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.7140
Ext. Price$ 0.7140
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$0.7140$214.2000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
HGTG12N60C3DN/A
Harris Corporation
IGBT 600 V 24 A 104 W Through Hole TO-247
IRFD123N/A
Harris Corporation
N-Channel 100 V 1.3A (Ta) Through Hole 4-HVMDIP
RFP15N05LN/A
Harris Corporation
N-Channel 50 V 15A (Tc) 60W (Tc) Through Hole TO-220-3
RFP15P05N/A
Harris Corporation
P-Channel 50 V 15A (Tc) 80W (Tc) Through Hole TO-220-3
RFP50N06N/A
Harris Corporation
N-Channel 60 V 50A (Tc) 131W (Tc) Through Hole TO-220-3
TIP32CN/A
Harris Corporation
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 2 W Through Hole TO-220-3
TIP42C$0.2570
Harris Corporation
Bipolar (BJT) Transistor PNP 100 V 6 A 3MHz 2 W Through Hole TO-220-3
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrHarris Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance47mOhm @ 16A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Datasheet
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)