ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
G3R75MT12DN-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-3

1:$8.4000

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R75M-2729546
ManufacturerGeneSiC Semiconductor
MPN #.G3R75MT12D
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R75MT12D(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1957
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 8.4000
Ext. Price$ 8.4000
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.4000$8.4000
10$7.5680$75.6800
25$7.2560$181.4000
100$6.8160$681.6000
250$6.5360$1634.0000
500$6.3360$3168.0000
1000$6.1360$6136.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
G2R120MT33J$86.9170
GeneSiC Semiconductor
N-Channel 3300 V 35A Surface Mount TO-263-7
G3R160MT12D$5.2460
GeneSiC Semiconductor
N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3
G3R40MT12K$14.2170
GeneSiC Semiconductor
N-Channel 1200 V 71A (Tc) 333W (Tc) Through Hole TO-247-4
G3R450MT17J$6.4690
GeneSiC Semiconductor
N-Channel 1700 V 9A (Tc) 91W (Tc) Surface Mount TO-263-7
G3R45MT17K$26.6070
GeneSiC Semiconductor
N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-4
G3R60MT07D$8.1580
GeneSiC Semiconductor
750 V Through Hole TO-247-3
G3R60MT07K$8.3680
GeneSiC Semiconductor
750 V Through Hole TO-247-4
Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 15 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
RDS(on) Drain-to-Source On Resistance90mOhm @ 20A, 15V
Package Type (Mfr.)TO-247-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+22V, -10V
Maximum Power Dissipation207W (Tc)
Base Product NumberG3R75
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1560 pF @ 800 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.69V @ 7.5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
G3R75MT12D
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present