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G2R120MT33JN-Channel 3300 V 35A Surface Mount TO-263-7

1:$86.9170

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ABRmicro #.ABR2045-G2R120-2506270
ManufacturerGeneSiC Semiconductor
MPN #.G2R120MT33J
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetSiC MOSFETs Selector Guide(PDF)
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In Stock: 300
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Unit Price$ 86.9170
Ext. Price$ 86.9170
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Qty.Unit PriceExt. Price
1$86.9170$86.9170
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG2R™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberG2R120
Continuous Drain Current (ID) @ 25°C35A
Drain-to-Source Voltage (VDS)3300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3706 pF @ 1000 V
MfrGeneSiC Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance156mOhm @ 20A, 20V
Package Type (Mfr.)TO-263-7
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SiC MOSFETs Selector Guide
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)