ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
G3R160MT17DN-Channel 1700 V 21A (Tc) 175W (Tc) Through Hole TO-247-3

1:$9.8480

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R160-2634163
ManufacturerGeneSiC Semiconductor
MPN #.G3R160MT17D
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R160MT17D(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 424
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 9.8480
Ext. Price$ 9.8480
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.8480$9.8480
10$8.9070$89.0700
25$8.5520$213.8000
100$8.0530$805.3000
250$7.7400$1935.0000
500$7.5070$3753.5000
1000$7.2810$7281.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
G2R120MT33J$86.9170
GeneSiC Semiconductor
N-Channel 3300 V 35A Surface Mount TO-263-7
G3R160MT12D$5.2460
GeneSiC Semiconductor
N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3
G3R40MT12K$14.2170
GeneSiC Semiconductor
N-Channel 1200 V 71A (Tc) 333W (Tc) Through Hole TO-247-4
G3R450MT17J$6.4690
GeneSiC Semiconductor
N-Channel 1700 V 9A (Tc) 91W (Tc) Surface Mount TO-263-7
G3R45MT17K$26.6070
GeneSiC Semiconductor
N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-4
G3R60MT07D$8.1580
GeneSiC Semiconductor
750 V Through Hole TO-247-3
G3R60MT07K$8.3680
GeneSiC Semiconductor
750 V Through Hole TO-247-4
Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberG3R160
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)1700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)51 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1272 pF @ 1000 V
MfrGeneSiC Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation175W (Tc)
RDS(on) Drain-to-Source On Resistance208mOhm @ 12A, 15V
Package Type (Mfr.)TO-247-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
G3R160MT17D
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)