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G3R350MT12DN-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3

1:$3.7810

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R350-2759712
ManufacturerGeneSiC Semiconductor
MPN #.G3R350MT12D
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R350MT12D(PDF)
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In Stock: 5907
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 3.7810
Ext. Price$ 3.7810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.7810$3.7810
10$3.3580$33.5800
25$3.1990$79.9750
100$2.9750$297.5000
250$2.8400$710.0000
500$2.7440$1372.0000
1000$2.6400$2640.0000
2500$2.5210$6302.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 15 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation74W (Tc)
Package Type (Mfr.)TO-247-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
RDS(on) Drain-to-Source On Resistance420mOhm @ 4A, 15V
Base Product NumberG3R350
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)334 pF @ 800 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.69V @ 2mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R350MT12D
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99