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G3R30MT12KN-Channel 1200 V 90A (Tc) 400W (Tc) Through Hole TO-247-4

1:$17.9720

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R30M-2846362
ManufacturerGeneSiC Semiconductor
MPN #.G3R30MT12K
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R30MT12K(PDF)
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In Stock: 1003
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 17.9720
Ext. Price$ 17.9720
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$17.9720$17.9720
10$16.5120$165.1200
25$15.9700$399.2500
100$15.1720$1517.2000
250$14.6700$3667.5000
500$14.3030$7151.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 15 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation400W (Tc)
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
RDS(on) Drain-to-Source On Resistance36mOhm @ 50A, 15V
Base Product NumberG3R30
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3901 pF @ 800 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.69V @ 12mA
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R30MT12K
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present