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G3R30MT12JN-Channel 1200 V 96A (Tc) 459W (Tc) Surface Mount TO-263-7

1:$13.9240

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R30M-2734450
ManufacturerGeneSiC Semiconductor
MPN #.G3R30MT12J
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R30MT12J(PDF)
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In Stock: 41
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 13.9240
Ext. Price$ 13.9240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$13.9240$13924.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C96A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 15 V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Package Type (Mfr.)TO-263-7
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
RDS(on) Drain-to-Source On Resistance36mOhm @ 50A, 15V
Base Product NumberG3R30
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3901 pF @ 800 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.69V @ 12mA
Maximum Power Dissipation459W (Tc)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R30MT12J
EDA Models
G3R30MT12J Models
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99