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G3R20MT17KN-Channel 1700 V 124A (Tc) 809W (Tc) Through Hole TO-247-4

1:$85.5140

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R20M-2845634
ManufacturerGeneSiC Semiconductor
MPN #.G3R20MT17K
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R20MT17K(PDF)
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In Stock: 723
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 85.5140
Ext. Price$ 85.5140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$85.5140$85.5140
10$79.3240$793.2400
25$76.9860$1924.6500
100$73.5800$7358.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C124A (Tc)
Drain-to-Source Voltage (VDS)1700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 15mA
RDS(on) Drain-to-Source On Resistance26mOhm @ 75A, 15V
Gate Charge Total (Qg)(Max.)400 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10187 pF @ 1000 V
Base Product NumberG3R20
Maximum Power Dissipation809W (Tc)
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R20MT17K
EDA Models
G3R20MT17K Models
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present