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G3R20MT12KN-Channel 1200 V 128A (Tc) 542W (Tc) Through Hole TO-247-4

1:$28.7890

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R20M-2826765
ManufacturerGeneSiC Semiconductor
MPN #.G3R20MT12K
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R20MT12K(PDF)
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In Stock: 702
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 28.7890
Ext. Price$ 28.7890
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$28.7890$28.7890
10$26.4680$264.6800
25$25.6060$640.1500
100$24.3380$2433.8000
250$23.5400$5885.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C128A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)±15V
Base Product NumberG3R20
Gate Charge Total (Qg)(Max.)219 nC @ 15 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.69V @ 15mA
RDS(on) Drain-to-Source On Resistance24mOhm @ 60A, 15V
Maximum Power Dissipation542W (Tc)
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5873 pF @ 800 V
Package / CaseTO-247-4
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EDA Models
G3R20MT12K Models
Datasheets
G3R20MT12K
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)