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G3R160MT12JN-Channel 1200 V 19A (Tc) 128W (Tc) Surface Mount TO-263-7

1:$5.7920

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ABRmicro #.ABR2045-G3R160-2739260
ManufacturerGeneSiC Semiconductor
MPN #.G3R160MT12J
Estimated Lead Time26 Weeks
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DatasheetDatasheetG3R160MT12J(PDF)
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In Stock: 635
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Unit Price$ 5.7920
Ext. Price$ 5.7920
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Qty.Unit PriceExt. Price
1$5.7920$5.7920
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG3R™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberG3R160
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation128W (Tc)
Package Type (Mfr.)TO-263-7
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+20V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 5mA (Typ)
RDS(on) Drain-to-Source On Resistance208mOhm @ 10A, 15V
Gate Charge Total (Qg)(Max.)23 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)724 pF @ 800 V
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R160MT12J
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)