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G3R12MT12KN-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4

1:$49.8910

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G3R12M-2709101
ManufacturerGeneSiC Semiconductor
MPN #.G3R12MT12K
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG3R12MT12K(PDF)
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In Stock: 242
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 49.8910
Ext. Price$ 49.8910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$49.8910$49.8910
10$46.4550$464.5500
25$45.1520$1128.8000
100$43.2530$4325.3000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V, 18V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+22V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 50mA
RDS(on) Drain-to-Source On Resistance13mOhm @ 100A, 18V
Gate Charge Total (Qg)(Max.)288 nC @ 15 V
Maximum Power Dissipation567W (Tc)
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9335 pF @ 800 V
Continuous Drain Current (ID) @ 25°C157A (Tc)
Base Product NumberG3R12M
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
G3R12MT12K
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)