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G2R50MT33KN-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4

1:$235.8570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G2R50M-2764261
ManufacturerGeneSiC Semiconductor
MPN #.G2R50MT33K
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetG2R50MT33K(PDF)
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In Stock: 173
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 235.8570
Ext. Price$ 235.8570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$235.8570$235.8570
10$221.4360$2214.3600
25$215.9470$5398.6750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesG2R™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C63A (Tc)
Drain-to-Source Voltage (VDS)3300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
RDS(on) Drain-to-Source On Resistance50mOhm @ 40A, 20V
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7301 pF @ 1000 V
Maximum Power Dissipation536W (Tc)
Gate Charge Total (Qg)(Max.)340 nC @ 20 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 10mA (Typ)
Package / CaseTO-247-4
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Datasheets
G2R50MT33K
EDA Models
G2R50MT33K Models
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present