ALD212900APALMosfet Array 10.6V 80mA 500mW Through Hole 8-PDIP
1:$4.3100
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-ALD212-2855797
ManufacturerAdvanced Linear Devices
MPN #.ALD212900APAL
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
ALD212900/A (PDF)
ALD212900/A (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$4.3100
Ext. Price$4.3100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$4.3100$215.4750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesEPAD®, Zero Threshold™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C80mA
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)-
Mounting StyleThrough Hole
Power - Max500mW
Package Type (Mfr.)8-PDIP
TechnologyMOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS)10.6V
Operating Temperature0°C ~ 70°C (TJ)
Configuration2 N-Channel (Dual) Matched Pair
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)30pF @ 5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)10mV @ 20µA
RDS(on) Drain-to-Source On Resistance14Ohm
Base Product NumberALD212900
Package / Case8-DIP (0.300", 7.62mm)
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Datasheets
EDA Models
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
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