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ALD114904PALMosfet Array 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP

1:$3.9030

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-ALD114-2850399
MPN #.ALD114904PAL
Estimated Lead Time8 Weeks
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In Stock: 87
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 3.9030
Ext. Price$ 3.9030
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$3.9030$195.1500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesEPAD®
Packaging
Tube
Lifecycle StatusActive
FET FeatureDepletion Mode
Gate Charge Total (Qg)(Max.)-
Mounting StyleThrough Hole
Power - Max500mW
Package Type (Mfr.)8-PDIP
TechnologyMOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS)10.6V
Operating Temperature0°C ~ 70°C (TJ)
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2.5pF @ 5V
Continuous Drain Current (ID) @ 25°C12mA, 3mA
Base Product NumberALD114904
Configuration2 N-Channel (Dual) Matched Pair
VGS(th) Gate-to-Source Threshold Voltage (Max.)360mV @ 1µA
RDS(on) Drain-to-Source On Resistance500Ohm @ 3.6V
Package / Case8-DIP (0.300", 7.62mm)
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Environmental & Export Classifications
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging