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C3M0120065J-TRN-Channel 650 V 21A (Tc) 86W (Tc) Surface Mount TO-263-7

1:$8.0530

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-C3M012-2269820
ManufacturerWolfspeed, Inc.
MPN #.C3M0120065J-TR
Estimated Lead Time34 Weeks
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DatasheetDatasheetC3M0120065J (PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$8.0530
Ext. Price$8.0530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.0530$8.0530
10$6.9050$69.0520
100$5.7530$575.3440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberC3M0120065
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)640 pF @ 400 V
MfrWolfspeed, Inc.
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation86W (Tc)
RDS(on) Drain-to-Source On Resistance157mOhm @ 6.76A, 15V
Package Type (Mfr.)TO-263-7
TechnologySiC (Silicon Carbide Junction Transistor)
Gate-to-Source Voltage (Vɢs)+19V, -8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.6V @ 1.86mA
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
C3M0120065J
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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