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WNSC6D04650QDiode 650 V 4A Through Hole TO-220AC
1:$0.6480
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2042-WNSC6D-2138593
ManufacturerWeEn Semiconductors
MPN #.WNSC6D04650Q
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetWNSC6D04650(PDF)
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In Stock: 63
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.6480
Ext. Price$ 0.6480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.6480$1944.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Diode Array 1 Pair Common Cathode 1200 V 40A Through Hole TO-247-3 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberWNSC6
Total Capacitance @ Vʀ, f233pF @ 1V, 1MHz
Average Rectified Forward Current (Iᴏ)4A
Reverse Leakage Current @ Rated Vʀ30 µA @ 650 V
MfrWeEn Semiconductors
Mounting StyleThrough Hole
Junction Temperature Range175°C
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time > 500mA (Io)
Package Type (Mfr.)TO-220AC
TechnologySiC (Silicon Carbide) Schottky
Max. DC Blocking Voltage (Vʀ)650 V
Forward Voltage (Vғ) @ Iғ1.4 V @ 4 A
Package / CaseTO-220-2
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)