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LM5104SD/NOPBHalf-Bridge Gate Driver IC Inverting, Non-Inverting 10-WSON (4x4)

1:$3.0600

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ABRmicro #.ABR730-LM5104-278786
ManufacturerTexas Instruments
MPN #.LM5104SD/NOPB
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetDatasheetLM5104 (PDF)
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In Stock: 1810
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$3.0600
Ext. Price$3.0600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0600$3.0600
10$2.7460$27.4550
25$2.5960$64.8920
100$2.2490$224.9310
250$2.1340$533.3750
500$1.9150$957.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberLM5104
Channel TypeSynchronous
Current - Peak Output (Source, Sink)1.6A, 1.6A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap)118 V
Input TypeInverting, Non-Inverting
Logic Voltage - VIL, VIH0.8V, 2.2V
Mounting StyleSurface Mount
Number of Drivers2
Operating Temperature-40°C ~ 125°C (TJ)
Parameter ProgrammingSupported
Output Signal Rise Time & Fall Time600ns, 600ns
Package Type (Mfr.)10-WSON (4x4)
Supply Voltage9V ~ 14V
Package / Case10-WDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8542.39.0001 (No rates found in the Harmonized Tariff Schedule)
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Additional Details
The LM5104SD/NOPB is a half-bridge gate driver IC manufactured by Texas Instruments. This component features dual configurations as both inverting and non-inverting, housed in a compact 10-WSON package measuring 4x4 mm. It is designed to drive N-channel MOSFETs, supporting high voltage applications with an operating capacity up to 118 volts. The device has symmetrical propagation delays of 600ns for both the rising and falling edges, ensuring reliable and efficient switching performance.
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