BQ4010YMA-70NNVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)
N/A
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ABRmicro #.ABR2020-BQ4010-282717
ManufacturerTexas Instruments
MPN #.BQ4010YMA-70N
Estimated Lead Time-
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Datasheet
BQ4010(Y,LY)(PDF)
BQ4010(Y,LY)(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Access Time70 ns
Base Product NumberBQ4010
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization8K x 8
Memory Size64Kbit
Memory TypeNon-Volatile
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 85°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)28-DIP Module (18.42x37.72)
TechnologyNVSRAM (Non-Volatile SRAM)
Supply Voltage4.5V ~ 5.5V
Write Cycle Time (Twc)70ns
Package / Case28-DIP Module (0.61", 15.49mm)
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8542.32.0041 (Static read-write random access (SRAM); No import duty applies)