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S34MS01G204BHI010FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

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ABRmicro #.ABR2020-S34MS0-2843590
ManufacturerSpansion
MPN #.S34MS01G204BHI010
Estimated Lead Time-
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DatasheetDatasheetDatasheet(PDF)
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In Stock: 98
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
SeriesMS-2
Packaging
Bulk
Lifecycle StatusActive
Access Time45 ns
Base Product NumberS34MS01
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization64M x 16
Memory Size1Gbit
Memory TypeNon-Volatile
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Package Type (Mfr.)63-BGA (11x9)
TechnologyFLASH - NAND
Supply Voltage1.7V ~ 1.95V
Write Cycle Time (Twc)45ns
Package / Case63-VFBGA
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Environmental & Export Classifications
US ECCN3A991B1A AT
HTSUS8542.32.0071 (Other; No import duty applies)